POWER SEMICONDUCTORS

LN431885

VDRM / VRRM Tj = Tj max

1800 (V)

IT(AV) at Tc

850/89 (A / °C)

ITSM

27,7@10ms (kA)

I²t

3830@10ms (kA2s)

Vo Tj=Tj max

0,905 (V)

rt Tj=Tj max

0,160 (mΩ)

Junction temperature range

– 40 to 130 (°C)

RthJC per module

0,0325 (°C/W)

RthJC per junction

– (°C/W)

RthCS per module

0,01 (°C/W)

Dimensions

124×60 (mm)

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