POWER SEMICONDUCTORS

LD412660

VRRM Tj = Tj max

2600 (V)

IF(AV) at Tc

600/106 (A)

IFSM

19@10ms (kA)

I²t

1810@10ms (kA2s)

Vo Tj=Tj max

0,747 (V)

rd Tj=Tj max

0,243 (mΩ)

Junction temperature range

– 40 to 150 (°C)

RthJC per module

0,0325 (°C/W)

RthJC per junction

0,065 (°C/W)

RthCS per module

0,01 (°C/W)

Dimensions

124×60 (mm)

Package information

serie
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